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ST1S30PUR 数据表(PDF) 6 Page - STMicroelectronics |
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ST1S30PUR 数据表(HTML) 6 Page - STMicroelectronics |
6 / 11 page Electrical characteristics ST1S30 6/11 Doc ID 17927 Rev 1 4 Electrical characteristics Refer to Figure 3 application circuit VIN_SW = VIN_A = 5 V, VO = 1.2 V, C1 = 10 µF, C2 = 22 µF, L1 = 2.2 µH, TJ = -25 to 125 °C (unless otherwise specified. Typical values are referred to 25 °C) Table 6. Electrical characteristics for ST1S30 Symbol Parameter Test conditions Min. Typ. Max. Unit FB Feedback voltage 784 800 816 mV IFB VFB pin bias current 600 nA VI Input voltage IO = 10 mA to 3 A 2.7 5.5 V UVLO Under voltage lock out threshold VI Rising 2.3 V Hysteresis 150 mV OVP Overvoltage protection threshold VO rising 1.05 VO 1.1 VO V Overvoltage protection hysteresis VO falling 5 % IOVP Overvoltage clamping current VO = 1.2 V 300 mA IQ Quiescent current VINH > 1.2 V, not switching 1.5 2.5 mA VINH < 0.0 V, T = - 30 °C to 85 °C 1 IO Output current VI = 2.7 to 5.5 V (1) 3A %VO/ΔVI Output line regulation VI = 2.7 V to 5.5 V, IO = 100 mA (1) 0.16 %VO/ ΔV I %VO/ΔIO Output load regulation IO = 10 mA to 3 A (1) 0.2 % PWMfS PWM switching frequency VFB = 0.65 V 1.2 1.5 1.8 MHz DMAX Maximum duty cycle 80 87 % PG Power good output threshold 0.92 VO V Power good output voltage low ISINK = 6 mA open drain output 0.4 V RDSON-N NMOS switch on resistance ISW = 750 mA 0.1 Ω RDSON-P PMOS switch on resistance ISW = 750 mA 0.1 Ω ISWL Switching current limitation (1) 3.7 4.4 5.1 A ν Efficiency (1) IO = 10 mA to 100 mA, VO = 3.3 V 65 % IO = 100 mA to 3 A, VO = 3.3 V 85 TSHDN Thermal shutdown 150 °C THYS Thermal shutdown hysteresis 20 °C %VO/ΔIO Load transient response IO = 100 mA to 1 A, TA = 25 °C tR = tF ≥ 200 ns (1) -10 +10 %VO %VO/ΔIO Short circuit removal response IO = 10 mA to IO = short, TA = 25 °C (1) -10 +10 %VO 1. Guaranteed by design, but not tested in production. |
类似零件编号 - ST1S30PUR |
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类似说明 - ST1S30PUR |
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