BDX33B datasheet(1/6 Pages) ONSEMI

部件名	BDX33B

功能描述	Darlington Complementary Silicon Power Transistors

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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November, 2007 - Rev. 12

1

Publication Order Number:

BDX33B/D

BDX33B, BDX33C* (NPN)

BDX34B, BDX34C* (PNP)

BDX33C and BDX34C are Preferred Devices

Darlington Complementary

Silicon Power Transistors

These devices are designed for general purpose and low speed

switching applications.

Features

• High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0

• Collector-Emitter Sustaining Voltage at 100 mAdc

VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B

= 100 Vdc (min) - BDX33C, BDX334C

• Low Collector-Emitter Saturation Voltage

VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc

- BDX33B, 33C/34B, 34C

• Monolithic Construction with Build-In Base-Emitter Shunt Resistors

• Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BDX33B, BDX34B

BDX33C, BDX34C

VCEO

80

100

Vdc

Collector-Base Voltage

BDX33B, BDX34B

BDX33C, BDX34C

VCB

80

100

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Collector Current

- Continuous

- Peak

IC

10

15

Adc

Base Current

IB

0.25

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

70

0.56

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

-65 to +150

°C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction-to-Case

RqJC

1.78

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80-100 VOLTS, 65 WATTS

TO-220AB

CASE 221A-09

STYLE 1

1

http://onsemi.com

MARKING DIAGRAM

BDX3xy =

Device Code

x = 3 or 4

y = B or C

A

=

Assembly Location

Y

=

Year

WW

=

Work Week

G

=

Pb-Free Package

2

3

BDX3xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Preferred devices are recommended choices for future use

and best overall value.

类似零件编号 - BDX33B

制造商	部件名	数据表	功能描述
Mospec Semiconductor	BDX33B	92Kb / 2P	POWER TRANSISTORS(10A,70W)
Micro Commercial Compon...	BDX33B	875Kb / 4P	NPN Silicon Power Darlingtons
Motorola, Inc	BDX33B	135Kb / 6P	Darlington Complementary Silicon Power Transistors
Inchange Semiconductor ...	BDX33B	135Kb / 3P	Silicon NPN Power Transistors
ON Semiconductor	BDX33B	135Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 7

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