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2N3019S 数据表(PDF) 1 Page - ON Semiconductor |
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2N3019S 数据表(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 0 1 Publication Order Number: 2N3019S/D 2N3019S Low Power Transistor NPN Silicon Features • MIL−PRF−19500/391Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 140 Vdc Emitter−Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C PT 800 mW Total Device Dissipation @ TC = 25°C PT 5.0 W Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 195 °C/W Thermal Resistance, Junction to Case RqJC 30 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER TO−39 CASE 205AB STYLE 1 Device Package Shipping ORDERING INFORMATION JAN2N3019S JANTX2N3019S TO−39 Bulk JANTXV2N3019S |
类似零件编号 - 2N3019S |
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类似说明 - 2N3019S |
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