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TP858C12R 数据表(PDF) 1 Page - Fuji Electric |
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TP858C12R 数据表(HTML) 1 Page - Fuji Electric |
1 / 6 page 1 TP858C12R Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 120 V Average output current Io 50Hz square wave duty =1/2 Tc =106˚C 30* A Non-repetitive forward surge current** IFSM Sine wave, 10ms 1shot 110 A Operating junction temperature Tj - 150 ˚C Storage temperature Tstg - -40 to +150 ˚C Note* Out put current of center tap full wave connection. Note** Rating per element Electrical characteristics (at Ta=25˚C unless otherwise specified.) Item Symbols Conditions Maximum Units Forward voltage*** VF IF = 15 A 1.01 V Reverse current*** IR VR =VRRM 200 µA Thermal resistance Rth(j-c) Junction to case 1.25 ˚C/W Note*** Rating per element http://www.fujisemi.com FUJI Diode Mechanical characteristics Item Conditions Maximum Units Approximate mass - 1.6 g Schottky Barrier Diode |
类似零件编号 - TP858C12R |
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类似说明 - TP858C12R |
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