FMH23N50ES datasheet(3/5 Pages) FUJI

部件名	FMH23N50ES

功能描述	N-CHANNEL SILICON POWER MOSFETFeatures

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制造商	FUJI [Fuji Electric]

网页	http://www.fujielectric.co.jp/eng/fdt/scd

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33

FUJI POWER MOSFET

FMH23N50ES

-50

-25

0

25

50

75

100

125

150

0

1

2

3

4

5

6

7

8

typ.

max.

min.

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250µA

Tch [°C]

0

20

40

60

80

100

120

0

2

4

6

8

10

12

14

Qg [nC]

Typical Gate Charge Characteristics

VGS=f(Qg):ID=23A,Tch=25 °C

400V

250V

Vcc= 100V

10

-2

10

-1

10

0

10

1

10

2

10

0

10

1

10

2

10

3

10

4

VDS [V]

Typical Capacitance

C=f(VDS):VGS=0V,f=1MHz

Crss

Coss

Ciss

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

0.1

1

10

100

VSD [V]

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80 µs pulse test,Tch=25 °C

10

-1

10

0

10

1

10

2

10

0

10

1

10

2

10

3

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=300V,VGS=10V,RG=8.2 Ω

td(on)

tr

tf

td(off)

ID [A]

-50

-25

0

25

50

75

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

Tch [°C]

typ.

max.

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=11.5A,VGS=10V

类似零件编号 - FMH23N50ES

制造商	部件名	数据表	功能描述
Fuji Electric	FMH23N50E	557Kb / 5P	N-CHANNEL SILICON POWER MOSFET
Inchange Semiconductor ...	FMH23N50E	268Kb / 2P	isc N-Channel MOSFET Transistor

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