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KMB7D0NP30QA 数据表(PDF) 1 Page - KEC(Korea Electronics) |
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KMB7D0NP30QA 数据表(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 9 page  1/9 SEMICONDUCTOR TECHNICAL DATA KMB7D0NP30QA N and P-Ch Trench MOSFET Revision No : 3 General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Back-light Inverter. FEATURES ・N-Channel : VDSS=30V, ID=7A. : RDS(ON)=23.5mΩ(Max.) @ VGS=10V : RDS(ON)=39mΩ(Max.) @ VGS=4.5V ・P-Channel : VDSS=-30V, ID=-5A. : RDS(ON)=45.5mΩ(Max.) @ VGS=-10V : RDS(ON)=80mΩ(Max.) @ VGS=-4.5V ・Super High Dense Cell Design. ・Reliable and rugged. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Drain Current DC ID* 7 -5 A Pulsed (note1) IDP 29 -20 Source-Drain Diode Current IS 1.7 -1.7 A Drain Power Dissipation PD* 2 W Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ Thermal Resistance, Junction to Ambient RthJA* 62.5 ℃/W 2011. 3. 18 PIN CONNECTION (TOP VIEW) Note : *Sorface Mounted on FR4 Board |
类似零件编号 - KMB7D0NP30QA_11 |
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类似说明 - KMB7D0NP30QA_11 |
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