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BUZ73A 数据表(PDF) 8 Page - Infineon Technologies AG |
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BUZ73A 数据表(HTML) 8 Page - Infineon Technologies AG |
8 / 10 page BUZ 73A H Rev. 2.4 Page 8 2009-11-10 Avalanche energy E AS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V R GS = 25 Ω, L = 3.67 mH 20 40 60 80 100 120 ˚C 160 T j 0 10 20 30 40 50 60 70 80 90 100 110 mJ 130 E AS Typ. gate charge VGS = ƒ(QGate) parameter: I D puls = 14 A 0 4 8 12 16 20 24 28 32 nC 38 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 ˚C 160 T j 180 185 190 195 200 205 210 215 220 225 230 V 240 V (BR)DSS |
类似零件编号 - BUZ73A |
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类似说明 - BUZ73A |
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