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BF770A 数据表(PDF) 1 Page - Infineon Technologies AG |
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BF770A 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page 2007-04-20 1 BF770A 1 2 3 NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF770A LSs 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 90 mA Base current IB 9 Total power dissipation2) TS ≤ 63°C Ptot 300 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point3) RthJS ≤ 290 K/W 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance |
类似零件编号 - BF770A |
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类似说明 - BF770A |
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