2N5015_1 datasheet(2/2 Pages) SSDI

部件名	2N5015

功能描述	0.5 AMP, 1000 Volts NPN Transistor

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制造商	SSDI [Solid States Devices, Inc]

网页	http://www.ssdi-power.com

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2 / 2 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0043E

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

2N5015

Case Outline: TO-39

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

Case Outline: TO-5

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

Electrical Characteristic

3/

Symbol

Min

Typ

Max

Units

Collector – Emitter Breakdown Voltage

(IC = 200 µADC, RBE = 1 KΩ)

BVCER

1000

1300

––

V

Collector–Base Breakdown Voltage

(IC = 200 µADC)

BVCBO

1000

-

––

V

Emitter–Base Breakdown Voltage

(IE = 50 µADC)

BVEBO

5

7

––

V

Collector Cutoff Current (VCB = 760 V)

(VCB = 760 V, TC = 100°C)

ICBO

––

0.08

6

12

100

µAdc

Emitter Cutoff Current (VEB= 4V)

IEBO

—

0.003

20

µA

DC Current Gain

4/

(IC = 5 mADC, VCE = 10 VDC)

(IC = 20 mADC, VCE = 10 VDC)

hFE

10

30

70

80

180

––

Collector – Emitter Saturation Voltage

4/

(IC = 20 mADC, IB = 5 mADC)

VCE(Sat)

––

0.07

1.8

Vdc

Base – Emitter Saturation Voltage

4/

(IC = 20 mADC, IB = 5 mADC)

VBE(Sat)

––

0.7

1.0

Vdc

Current Gain Bandwidth Product

(IC = 20 mADC, VCE = 10 VDC, f = 20 MHz)

fT

20

25

––

MHz

Output Capacitance

(VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz)

Cob

––

12.5

30

pF

Delay Time

VCC= 125 VDC,

Rise Time

IC= 100 mADC,

Storage Time

IB1= 20 mADC

Fall Time

IB2= 20 mADC

pw= 2 us

td

tr

ts

tf

––

50

100

1500

450

200

1200

3000

800

nsec

类似零件编号 - 2N5015_1

制造商	部件名	数据表	功能描述
Microsemi Corporation	2N5015S	51Kb / 3P	NPN SILICON TRANSISTOR
Seme LAB	2N5015S	16Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO39
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Seme LAB	2N5015S	90Kb / 2P	HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR
Seme LAB	2N5015SX	15Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO39

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