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6N60G-X-TA3-T 数据表(PDF) 3 Page - Unisonic Technologies |
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6N60G-X-TA3-T 数据表(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 6N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-117.D ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 20 50 ns Turn-On Rise Time tR 70 150 ns Turn-Off Delay Time tD(OFF) 40 90 ns Turn-Off Fall Time tF VDD=300V, ID =6.2A, RG =25Ω (Note 1, 2) 45 100 ns Total Gate Charge QG 20 25 nC Gate-Source Charge QGS 4.9 nC Gate-Drain Charge QGD VDS=480V, ID=6.2A, VGS=10 V (Note 1, 2) 9.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 6.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 24.8 A Reverse Recovery Time tRR 290 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/μs (Note 1) 2.35 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
类似零件编号 - 6N60G-X-TA3-T |
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类似说明 - 6N60G-X-TA3-T |
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