6N90 datasheet(3/6 Pages) UTC

部件名	6N90

功能描述	6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

Download	6 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

3 / 6 page

6N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-492.a

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

900

V

Breakdown Voltage Temperature

Coefficient

BV

△

DSS/T

△ J Reference to 25°C, ID=250µA

1.07

V/°C

VDS=900V, VGS=0V

10

Drain-Source Leakage Current

IDSS

VDS=720V, TC=125°C

100

µA

Forward

VGS=+30V, VDS=0V

+100 nA

Gate- Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=3.1A

1.93 2.3

Ω

Forward Transconductance

gFS

VDS=50V, ID=3.1A (Note 4)

5.5

S

DYNAMIC PARAMETERS

Input Capacitance

CISS

1360 1770 pF

Output Capacitance

COSS

110 145

pF

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

11

15

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

30

40

nC

Gate to Source Charge

QGS

9.0

nC

Gate to Drain Charge

QGD

VGS=10V, VDS=720V, ID=6.2A

(Note 4, 5)

12

nC

Turn-ON Delay Time

tD(ON)

35

80

ns

Rise Time

tR

90

190

ns

Turn-OFF Delay Time

tD(OFF)

55

120

ns

Fall-Time

tF

VDD=450V, ID=6.2A, RG=25Ω

(Note 4, 5)

60

130

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

6.0

A

Maximum Body-Diode Pulsed Current

ISM

24

A

Drain-Source Diode Forward Voltage

VSD

IS=6.2A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time

tRR

630

ns

Body Diode Reverse Recovery Charge

QRR

IS=6.2A, VGS=0V, dIF/dt=100A/µs

(Note 4)

6.9

µC

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 34mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

类似零件编号 - 6N90

制造商	部件名	数据表	功能描述
Unisonic Technologies	6N90	203Kb / 5P	6.2A, 900V N-CHANNEL POWER MOSFET
Nell Semiconductor Co.,...	6N90	403Kb / 8P	N-Channel Power MOSFET
Fairchild Semiconductor	6N90C	789Kb / 9P	900V N-Channel MOSFET
Unisonic Technologies	6N90G-T2Q-T	283Kb / 8P	N-CHANNEL POWER MOSFET
Unisonic Technologies	6N90G-TA3-T	203Kb / 5P	6.2A, 900V N-CHANNEL POWER MOSFET

More results

类似说明 - 6N90

制造商	部件名	数据表	功能描述
Unisonic Technologies	8N90	163Kb / 5P	8 Amps, 900 Volts N-CHANNEL POWER MOSFET
	5N90	171Kb / 6P	5 Amps, 900 Volts N-CHANNEL POWER MOSFET
	3N90	223Kb / 6P	3 Amps, 900 Volts N-CHANNEL POWER MOSFET
	1N90	164Kb / 6P	1 Amps, 900 Volts N-CHANNEL POWER MOSFET
	10N90	194Kb / 6P	10 Amps, 900 Volts N-CHANNEL POWER MOSFET
	11N90	199Kb / 6P	11 Amps, 900 Volts N-CHANNEL POWER MOSFET
	3N90Z	185Kb / 6P	3 Amps, 900 Volts N-CHANNEL POWER MOSFET
	2N90	186Kb / 6P	2 Amps, 900 Volts N-CHANNEL POWER MOSFET
	4N90	184Kb / 6P	4 Amps, 900 Volts N-CHANNEL POWER MOSFET
	6N60	249Kb / 6P	6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

More results

6N90 数据表(PDF) 3 Page - Unisonic Technologies

6N90 数据表(HTML) 3 Page - Unisonic Technologies

类似零件编号 - 6N90

类似说明 - 6N90

Html Pages

1 2 3 4 5 6

数据表下载

链接网址

6N90 数据表(PDF) 3 Page - Unisonic Technologies

6N90 数据表(HTML) 3 Page - Unisonic Technologies

类似零件编号 - 6N90

类似说明 - 6N90

Html Pages

1 2 3 4 5 6

数据表 下载

链接网址

数据表下载