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2SD1691G-X-TA3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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2SD1691G-X-TA3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SD1691 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R204-015,C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V DC Ic 5 Collector Current Pulse (PW 10ms,Duty Cycle 50% ≦≦ ) Icp 8 A Base Current IB 1 A TO-126/ TO-126C 20 TO-220F1 23 Collector Power Dissipation (Tc=25°C) TO-220 Pc 54 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified ) CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-off Current ICBO VCB=50V,IE=0 10 μA Emitter Cut-off Current IEBO VEB=7V,Ic=0 10 μA hFE1 VCE=1V,Ic=0.1A 60 hFE2 VCE=1V,Ic=2A 160 400 DC Current Gain hFE3 VCE=2V,Ic=5A 50 Collector-Emitter Saturation Voltage VCE(SAT) (Note) Ic=2A,IB=0.2A 0.1 0.3 V Base-Emitter Saturation Voltage VBE(SAT) (Note) Ic=2A,IB=0.2A 0.9 1.2 V Turn On Time TON 0.2 1 Storage Time TSTG 1.1 2.5 Switching Time Fall Time TF 20μsec IB1 IB2 IB1=-IB2=0.2A DUTY CYCLE≦1% INPUT IB1 IB2 OUTPUT Vcc=10V 5Ω Ω 0.2 1 μs Note: Pulse test: PW 50 ≦ μS, Duty Cycle 2% Pulse ≦ CLASSIFICATION OF hFE2 RANK O Y RANGE 160-320 200-400 |
类似零件编号 - 2SD1691G-X-TA3-T |
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类似说明 - 2SD1691G-X-TA3-T |
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