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FW906 数据表(PDF) 1 Page - Sanyo Semicon Device

部件名 FW906
功能描述  General-Purpose Switching Device Applications
Download  6 Pages
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

FW906 数据表(HTML) 1 Page - Sanyo Semicon Device

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FW906
No. A1809-1/6
Features
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.)
4V drive
N-channel MOSFET + P-channel MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
8
--6
A
Drain Current (PW≤10s)
ID
Duty cycle≤1%
9
--7
A
Drain Current (PW≤100ms)
ID
Duty cycle≤1%
20
--15
A
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
52
--52
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
2.3
W
Total Dissipation
PT
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7005A-003
Ordering number : ENA1809
72110PA TK IM TC-00002248
SANYO Semiconductors
DATA SHEET
FW906
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
Electrical Connection
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
5.0
0.2
0.1
0.43
1.27
14
5
8
TL
W906
LOT No.
876
5
123
4


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