CS89M

CS89N

SURFACE MOUNT

0.8 AMP SILICON SCR

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS89M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CS89M

CS89N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

600

800

V

RMS On-State Current (TC=60°C)

IT(RMS)

0.8

A

Peak One Cycle Surge, t=10ms

ITSM

10

A

0.24

Peak Gate Power, tp=10μs

PGM

2.0

W

Average Gate Power Dissipation

PG(AV)

0.1

W

Peak Gate Current, tp=10μs

IGM

1.0

A

Peak Gate Voltage, tp=10μs

VGM

8.0

V

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

Thermal Resistance

ΘJA

104

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM

Rated VDRM, VRRM, RGK=1KΩ

1.0

μA

IDRM, IRRM

Rated VDRM, VRRM, RGK=1KΩ, TC=125°C

100

μA

IGT

VD=12V

20

200

μA

IH

RGK=1KΩ

0.25

5.0

mA

VGT

VD=12V

0.61

0.8

V

VTM

ITM=1.0A, tp=380μs

1.2

1.7

V

dv/dt

25

V/μs

SOT-89 CASE

R1 (12-February 2010)

www.centra lsemi.com