2SD1784

2010-03-10

1

TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)

2SD1784

Micro Motor Drive, Hammer Drive Applications

Switching Applications

Power Amplifier Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

30

V

Collector-emitter voltage

30

V

Emitter-base voltage

10

V

Collector current

1.5

A

Base current

50

mA

Collector power dissipation

(Note 1)

1000

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: 2SD1784 mounted on a ceramic substrate (250 mm

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)