LC35256D-10 datasheet(4/8 Pages) SANYO

部件名	LC35256D-10

功能描述	Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM

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制造商	SANYO [Sanyo Semicon Device]

网页	https://www.sanyo-av.com/us/

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4 / 8 page

AC Electrical Characteristics at Ta = –40 to +85°C, VCC = 4.5 to 5.5 V

No. 5823-4/8

LC35256D-10, LC35256DM, DT-70/10

LC35256D, DM, DT

Parameter

Symbol

-70*

-10

Unit

min

max

min

max

Read cycle time

tRC

70

100

ns

Address access time

tAA

70

100

ns

CE access time

tCA

70

100

ns

OE access time

tOA

35

50

ns

Output hold time

tOH

10

ns

CE output enable time

tCOE

10

ns

OE output enable time

tOOE

5

ns

CE output disable time

tCOD

30

ns

OE output disable time

tOOD

25

ns

Read Cycle

Note *: Specification values for the LC35256DM and LC35256DT.

LC35256D, DM, DT

Parameter

Symbol

-70*

-10

Unit

min

max

min

max

Write cycle time

tWC

70

100

ns

Address setup time

tAS

0

ns

Write pulse width

tWP

55

60

ns

CE setup time

tCW

60

70

ns

Write recovery time

tWR

0

ns

CE write recovery time

tWR1

0

ns

Data setup time

tDS

35

40

ns

Data hold time

tDH

0

ns

CE data hold time

tDH1

0

ns

WE output enable time

tWOE

5

ns

WE output disable time

tWOD

30

ns

Write Cycle

Note *: Specification values for the LC35256DM and LC35256DT.

Note *: –2.0 V for pulse widths of up to 30 ns.

[3-V Operation]

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Supply voltage

VCC

2.7

3.0

3.6

V

Input voltages

VIH

VCC – 0.2

VCC + 0.3

V

VIL

–0.3*

+0.2

V

DC Allowable Operating Ranges at Ta = –40 to +85°C, VCC = 2.7 to 3.6 V

AC test conditions

Input pulse voltage level

VIH = 2.4 V, VIL = 0.6 V

Input rise and fall times

5 ns

Input and output timing level

1.5 V

Output load

LC35256DM, DT-70

One TTL gate + 30 pF (Including jig capacitances.)

LC35256D, DM, DT-10

One TTL gate + 100 pF (Including jig capacitances.)

类似零件编号 - LC35256D-10

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	LC35256A	181Kb / 8P	256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
	LC35256AM	181Kb / 8P	256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
	LC35256AM	174Kb / 7P	256 K (32768 words X 8 bits) SRAM with OE and CE control Pins?
	LC35256AS	181Kb / 8P	256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
	LC35256AT-10	181Kb / 8P	256 K (32768 words X 8 bits) SRAM with OE and CE control Pins

More results

类似说明 - LC35256D-10

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	LC35256FT	60Kb / 7P	256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
	LC35256FM	49Kb / 7P	256K (32768 words 8 bits) SRAM Control Pins: OE and CE
	LC35W256EM	46Kb / 6P	256K (32K words x 8 bits) SRAM Control pins: OE and CE
	LC35V256EM	46Kb / 6P	256K (32K words x 8 bits) SRAM Control pins: OE and CE
	LC35256A	181Kb / 8P	256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
	LC35256AM	174Kb / 7P	256 K (32768 words X 8 bits) SRAM with OE and CE control Pins?
	LC3564CM	71Kb / 11P	64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins
	LC3564B	137Kb / 9P	64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins
Hitachi Semiconductor	HN27C256G	437Kb / 6P	32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
Sony Corporation	CXK5V8257BTM	204Kb / 9P	32768-word X 8-bit High Speed CMOS Static RAM