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LB1966 数据表(PDF) 1 Page - Sanyo Semicon Device

部件名 LB1966
功能描述  Fan Motor 2-Phase Half-Wave Driver
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

LB1966 数据表(HTML) 1 Page - Sanyo Semicon Device

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LB1966M
No. 6215-1/4
Specification
Absolute Maximum Ratings at Ta = 25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VCC max
18
V
Allowable power dissipation
Pd max
With specified substrate *
800
mW
Output current
IOUTave
500
mA
IOUTpeak
t
≤ 1 ms
1200
mA
Output withstand voltage
VOUT max
Internal
V
RD output current
IRD max
10
mA
RD output withstand voltage
VRDOUT max
18
V
Operating temperature
Topr
–30 to +85
°C
Storage temperature
Tstg
–55 to +150
°C
* With substrate (114.3
× 76.1 × 1.5 mm3, glass epoxy)
Monolithic Digital IC
LB1966M
Fan Motor 2-Phase Half-Wave Driver
Package Dimensions
unit: mm
3086A-MFP10S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
63099RM(KI)
Ordering number : EN6215
[LB1966M]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
• Dual power supply voltage design (5/12V) and wide voltage
handling range
• Built-in Hall amplifier with hysteresis (supports core
without commutating pole)
• Built-in lockup protection and automatic recovery circuits
(External capacitor for rotation detection need only be 0.1
µF, allowing compact, cost-saving design)
• Built-in latch-type RD (restraint protection) output (Vosat =
0.2Vtyp at Io = 5 mA)
• Built-in output transistor with output withstand voltage
24Vmin/output current 500 mA (average), 1.2A (peak)
• Built-in thermal protection circuit
• Compact, high-temperature resistant MFP-10 package
reduces external parts count and mounting space, therefore
making this IC support the motors with a wide range of
sizes and speeds.
1
10
5
6
0.55
1.0
0.35
5.1
0.15
SANYO : MFP10S


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