SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 – APRIL 2002

FEATURES

*

400 Volt V

CEO

COMPLEMENTARY TYPE –

FMMT558

PARTMARKING DETAIL –

458

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

400

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

5V

Continuous Collector Current

225

mA

Peak Pulse Current

1A

Base Current

200

mA

500

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

400

V

I

Collector-Emitter

Breakdown Voltage

V

CEO(sus)

400

V

I

Emitter-Base

Breakdown Voltage

V

(BR)EBO

5V

I

Collector Cut-Off Current

I

CBO

100

nA

V

Collector Cut-Off Current

I

CES

100

nA

Emitter Cut-Off Current

I

EBO

100

nA

V

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.2

0.5

V

V

I

I

Base-Emitter

Saturation Voltage

V

BE(sat)

0.9

V

I

Base-Emitter

Turn On Voltage

V

BE(on)

0.9

V

Static Forward

Current Transfer Ratio

h

FE

100

100

15

300

I

I

I

Transition Frequency

f

T

50

MHz

I

f=20MHz

Output Capacitance

C

obo

5pF

V

Switching times

t

on

t

off

135 Typical

2260 Typical

ns

ns

I

I

*Measured under pulsed conditions.

Spice parameter data is available upon request for this device

FMMT458

C

B

E

SOT23

TBA