2SC2458

2003-03-27

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2458

Audio Amplifier Applications

· Low noise: NF (2) = 1dB (typ.), 10dB (max)

· Complementary to 2SA1048.

· Small package.

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

150

mA

Base current

50

mA

Collector power dissipation

200

mW

Junction temperature

125

°C

Storage temperature range

-55~125

°C

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

¾

¾

0.1

mA

Emitter cut-off current

¾

¾

0.1

mA

DC current gain

(Note)

70

¾

700

Collector-emitter saturation voltage

¾

0.1

0.25

V

Transition frequency

80

¾

¾

MHz

Collector output capacitance

¾

2.0

3.5

pF

Noise figure

NF

¾

1.0

10

dB

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1A

Weight: 0.13 g (typ.)