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2SC982TM 数据表(PDF) 1 Page - Toshiba Semiconductor |
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2SC982TM 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SC982TM 2003-03-25 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SC982TM Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications · High DC current gain: hFE (1) = 5000 (min) (IC = 10 mA) : hFE (2) = 10000 (min) (IC = 100 mA) Equivalent Circuit Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 10 V DC IC 300 Collector current Pulsed (Note) ICP 500 mA Base current IB 10 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Note: Pulse width < = 10 ms, duty cycle <= 10% Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ¾ ¾ 0.1 mA hFE (1) VCE = 5 V, IC = 10 mA 5000 ¾ ¾ DC current gain hFE (2) VCE = 2 V, IC = 100 mA 10000 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 0.3 mA ¾ 0.9 1.3 V Base-emitter voltage VBE VCE = 2 V, IC = 100 mA ¾ 1.25 1.6 V Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
类似零件编号 - 2SC982TM |
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类似说明 - 2SC982TM |
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