2SC982TM

2003-03-25

1

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Darlington)

2SC982TM

Printer Drive, Core Drive and LED Drive Applications

Low Frequency Amplifier Applications

Equivalent Circuit

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

40

V

Collector-emitter voltage

40

V

Emitter-base voltage

10

V

DC

300

Collector current

Pulsed

(Note)

500

mA

Base current

10

mA

Collector power dissipation

400

mW

Junction temperature

125

°C

Storage temperature range

-55~125

°C

Note: Pulse width <

= 10 ms, duty cycle <= 10%

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

¾

¾

0.1

mA

Emitter cut-off current

¾

¾

0.1

mA

5000

¾

¾

DC current gain

10000

¾

¾

Collector-emitter saturation voltage

¾

0.9

1.3

V

Base-emitter voltage

¾

1.25

1.6

V

Unit: mm

JEDEC

TO-92

JEITA

SC-43

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)