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2SA1451A 数据表(PDF) 4 Page - Toshiba Semiconductor |
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2SA1451A 数据表(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SA1451A 2006-11-09 4 Collector current IC (A) VBE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Common emitter IC/IB = 20 Tc = −55°C 25 100 −0.1 −0.3 −1 −3 −10 −0.1 −0.3 −0.5 −1 −3 −5 −10 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2 −4 −6 −8 Common emitter VCE = −1 V Tc = 100°C 25 −55 Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta −1 −3 −10 −30 −100 −0.1 −0.3 −0.5 −1 −30 −10 −5 −3 IC max (pulsed)* 10 ms* VCEO max 1 ms* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) DC operation Tc = 25°C (1) Tc = Ta Infinite heat sink (2) No heat sink 50 0 0 40 80 120 160 200 240 10 20 30 40 (1) (2) Pulse width tw (s) rth – tw 0.001 1000 10 100 0.01 0.1 30 0.3 3 1 100 10 1 0.1 Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink (1) (2) |
类似零件编号 - 2SA1451A_06 |
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类似说明 - 2SA1451A_06 |
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