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2SA1451A 数据表(PDF) 4 Page - Toshiba Semiconductor

部件名 2SA1451A
功能描述  High-Speed, High-Current Switching Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SA1451A 数据表(HTML) 4 Page - Toshiba Semiconductor

  2SA1451A_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1451A_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1451A_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1451A_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SA1451A_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SA1451A
2006-11-09
4
Collector current IC (A)
VBE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Common emitter
IC/IB = 20
Tc = −55°C
25
100
−0.1
−0.3
−1
−3
−10
−0.1
−0.3
−0.5
−1
−3
−5
−10
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−2
−4
−6
−8
Common emitter
VCE = −1 V
Tc = 100°C
25
−55
Collector-emitter voltage VCE (V)
Safe Operating Area
Ambient temperature Ta (°C)
PC – Ta
−1
−3
−10
−30
−100
−0.1
−0.3
−0.5
−1
−30
−10
−5
−3
IC max (pulsed)*
10 ms*
VCEO max
1 ms*
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
IC max
(continuous)
DC operation
Tc = 25°C
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
50
0
0
40
80
120
160
200
240
10
20
30
40
(1)
(2)
Pulse width tw (s)
rth – tw
0.001
1000
10
100
0.01
0.1
30
0.3
3
1
100
10
1
0.1
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
(1)
(2)


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