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2SA1203 数据表(PDF) 3 Page - Toshiba Semiconductor |
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2SA1203 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SA1203 2009-12-21 3 PC – Ta IC – VBE VCE (sat) – IC Collector current IC (mA) IC – VCE Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Safe Operating Area hFE – IC Collector current IC (mA) Ambient temperature Ta (°C) 0 −16 −8 −4 0 −0.8 −1.2 −12 −0.4 Common emitter Ta = 25°C IB = −1 mA −10 0 −8 −4 −3 −2 −6 Common emitter VCE = −2 V −1 500 −10 −300 −3 100 10 −30 −100 300 1000 Ta = 100°C 25 −25 50 30 3000 −3000 −1000 Common emitter IC/IB = 50 −1 −0.5 −10 −300 −3 −0.1 −0.01 −30 −100 −0.3 −1 −0.05 −0.03 −3 −3000 −1000 Ta = 100°C 25 −25 0 −1.6 −0.8 −0.4 0 −0.8 −1.6 Common emitter VCE = −2 V −1.2 −1.2 −0.4 −2.0 Ta = 100°C 25 −25 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. −0.1 −3 −0.3 −30 −100 −30 −10 −100 −5 −50 IC max (pulse)* IC max (continuous) 100 ms* 1 ms* 10 ms* VCEO max −10 −1 −300 −3000 −1000 −500 DC operation Ta = 25°C 0 0 0.6 0.2 0.8 0.4 1.2 1.0 120 80 100 40 60 20 140 160 (1) Mounted on a ceramic substrate (250 mm 2 × 0.8 t) (2) No heat sink (1) (2) 1 s* |
类似零件编号 - 2SA1203 |
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类似说明 - 2SA1203 |
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