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IRF7343QPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF7343QPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 10 page N-Ch P-Ch VDSS 55V -55V RDS(on) 0.050Ω 0.105Ω HEXFET® Power MOSFET 08/09/10 IRF7343QPBF Description D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Max. N-Channel P-Channel Units VDS Drain-Source Voltage 55 -55 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7 IDM Pulsed Drain Current 38 -27 PD@TA = 25°C Maximum Power Dissipation 2.0 W PD@TA = 70°C Maximum Power Dissipation 1.3 W EAS Single Pulse Avalanche Energy 72 114 mJ IAR Avalanche Current 4.7 -3.4 A EAR Repetitive Avalanche Energy 0.20 mJ VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter A Absolute Maximum Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance www.irf.com 1 l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 PD - 96110A |
类似零件编号 - IRF7343QPBF |
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类似说明 - IRF7343QPBF |
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