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1N4756 数据表(PDF) 1 Page - EIC discrete Semiconductors

部件名 1N4756
功能描述  SILICON ZENER DIODES
Download  2 Pages
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制造商  EIC [EIC discrete Semiconductors]
网页  http://www.eicsemi.com
标志 EIC - EIC discrete Semiconductors

1N4756 数据表(HTML) 1 Page - EIC discrete Semiconductors

  1N4756 Datasheet HTML 1Page - EIC discrete Semiconductors 1N4756 Datasheet HTML 2Page - EIC discrete Semiconductors  
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1N4728 - 1N4764
SILICON ZENER DIODES
Z1110 - Z1200
VZ : 3.3 - 200 Volts
PD : 1 Watt
FEATURES :
* Complete voltage range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.335 gram
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
Symbol
Value
Unit
DC Power Dissipation at TL = 50 °C (Note1)
PD
1.0
Watt
Maximum Forward Voltage at IF = 200 mA
VF
1.2
Volts
Maximum Thermal Resistance Junction to Ambient Air (Note2)
RӨJA
170
K / W
Junction Temperature Range
TJ
- 55 to + 175
°C
Storage Temperature Range
TSTG
- 55 to + 175
°C
Notes :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
0
25
50
75
100
125
150
175
TL, LEAD TEMPERATURE (
°C)
Page 1 of 2
Rev. 07 : November 5, 2007
0.25
0.50
0.75
1.00
1.25
L = 3/8" (9.5mm)
Fig. 1 POWER TEMPERATURE DERATING CURVE
0
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.108 (2.74)
0.078 (1.99)
0.205 (5.20)
0.161 (4.10)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
Certificate TH97/10561QM
Certificate TW00/17276EM


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