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BYC8DX-600 数据表(PDF) 4 Page - NXP Semiconductors |
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BYC8DX-600 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 11 page BYC8DX-600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 27 December 2010 4 of 11 NXP Semiconductors BYC8DX-600 Hyperfast power diode 5. Thermal characteristics 6. Isolation characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink without heatsink compound - - 7.2 K/W with heatsink compound ; see Figure 3 --5.5 K/W Rth(j-a) thermal resistance from junction to ambient free air -60 -K/W Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width 001aaf257 10−2 10−1 1 10 Zth(j-h) (K/W) 10−3 tp (s) 10−6 10 1 10−1 10−5 10−3 10−2 10−4 tp tp T P t T δ = Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance f = 1 MHz ; from cathode to external heatsink -10 -pF |
类似零件编号 - BYC8DX-600 |
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类似说明 - BYC8DX-600 |
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