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SPI20N65C3 数据表(PDF) 9 Page - Infineon Technologies AG

部件名 SPI20N65C3
功能描述  New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Download  15 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

SPI20N65C3 数据表(HTML) 9 Page - Infineon Technologies AG

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200
9-12-01
Rev. 3.
1
Page 9
SPP20N65C3, SPA20N65C3
SPI20N65C3
17 Typ. switching losses
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=3.6
0
3
6
9
12
15
A
21
ID
0
0.01
0.02
0.03
0.04
0.05
0.06
mWs
0.08
Eon*
Eoff
*) Eon includes SPD06S60 diode
commutation losses
18 Typ. switching losses
E = f(RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V,ID=11A
0
5
10
15
20
25
30
40
RG
0
0.05
0.1
0.15
0.2
0.25
0.3
mWs
0.4
Eon*
Eoff
*) Eon includes SPD06S60 diode
commutation losses
19 Avalanche SOA
IAR = f (tAR)
par.: Tj 150 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
µs
tAR
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
A
7
Tj(Start)=25°C
Tj(Start)=125°C
20 Avalanche energy
EAS = f (Tj)
par.: ID = 3.5 A, VDD = 50 V
20
40
60
80
100
120
°C
160
Tj
0
100
200
300
400
500
mJ
700


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