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SPI11N60C3 数据表(PDF) 4 Page - Infineon Technologies AG

部件名 SPI11N60C3
功能描述  Cool MOS??Power Transistor Feature New revolutionary high voltage technology
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

SPI11N60C3 数据表(HTML) 4 Page - Infineon Technologies AG

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20
09-11-27
Rev
.
3.2
Page 4
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
IS
TC=25°C
-
-
11
A
Inverse diode direct current,
pulsed
ISM
-
-
33
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=480V, IF=IS ,
diF/dt=100A/µs
-
400
600
ns
Reverse recovery charge
Qrr
-
6
-
µC
Peak reverse recovery current
Irrm
-
41
-
A
Peak rate of fall of reverse
recovery current
dirr/dt
Tj=25°C
-
1200
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
Rth1
0.015
0.15
K/W
Cth1
0.0001878
0.0001878
Ws/K
Rth2
0.03
0.03
Cth2
0.0007106
0.0007106
Rth3
0.056
0.056
Cth3
0.000988
0.000988
Rth4
0.197
0.194
Cth4
0.002791
0.002791
Rth5
0.216
0.413
Cth5
0.007285
0.007401
Rth6
0.083
2.522
Cth6
0.063
0.412
SPP_I
SPP_I
E xternal H eatsink
Tj
Tcase
Tamb
C th1
C th2
R th1
R th,n
C th,n
P tot (t)


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