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SPI16N50C3 数据表(PDF) 1 Page - Infineon Technologies AG |
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SPI16N50C3 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 14 page 20 07-08-30 Rev. 3.0 Page 1 SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.28 Ω ID 16 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) PG-TO220FP P G-TO220 P G-TO262 2 P-TO220-3-1 2 3 1 P-TO220-3-31 1 2 3 Marking 16N50C3 16N50C3 16N50C3 Type Package Ordering Code SPP16N50C3 P G-TO220 Q67040-S4583 SPI16N50C3 P G-TO262 Q67040-S4582 SPA16N50C3 P G-TO220FP SP000216351 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C ID 16 10 161) 101) A Pulsed drain current, tp limited by Tjmax ID puls 48 48 A Avalanche energy, single pulse ID=8, VDD=50V EAS 460 460 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V EAR 0.64 0.64 Avalanche current, repetitive tAR limited by Tjmax IAR 16 16 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 160 34 W Operating and storage temperature Tj , Tstg -55...+150 °C Reverse diode dv/dt dv/dt 15 V/ns 6 ) |
类似零件编号 - SPI16N50C3 |
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类似说明 - SPI16N50C3 |
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