SPI16N50C3 datasheet(1/14 Pages) INFINEON

部件名	SPI16N50C3

功能描述	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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20

07-08-30

Rev.

3.0

Page 1

SPP16N50C3

SPI16N50C3, SPA16N50C3

Cool MOS™ Power Transistor

VDS @ Tjmax

560

V

RDS(on)

0.28

Ω

ID

16

A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

PG-TO220FP

P

G-TO220

P

G-TO262

2

P-TO220-3-1

2 3

1

P-TO220-3-31

1

2

3

Marking

16N50C3

Type

Package

Ordering Code

SPP16N50C3

P

G-TO220

Q67040-S4583

SPI16N50C3

P

G-TO262

Q67040-S4582

SPA16N50C3

P

G-TO220FP

SP000216351

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

16

10

161)

101)

A

Pulsed drain current, tp limited by Tjmax

ID puls

48

A

Avalanche energy, single pulse

ID=8, VDD=50V

EAS

460

mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=16A, VDD=50V

EAR

0.64

Avalanche current, repetitive tAR limited by Tjmax

IAR

16

A

Gate source voltage

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

160

34

W

Operating and storage temperature

Tj , Tstg

-55...+150

°C

Reverse diode dv/dt

dv/dt

15

V/ns

6

)

类似零件编号 - SPI16N50C3

制造商	部件名	数据表	功能描述
Infineon Technologies A...	SPI16N50C3	363Kb / 13P	Cool MOS??Power Transistor Rev. 2.1 2004-04-07
Infineon Technologies A...	SPI16N50C3	729Kb / 14P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.2 2009-12-22
Inchange Semiconductor ...	SPI16N50C3	331Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - SPI16N50C3

制造商	部件名	数据表	功能描述
Infineon Technologies A...	SPP12N50C3	1Mb / 14P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.0 2007-08-30
	SPI11N60CFD	1Mb / 12P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.6 2009-04-24
	SPP11N65C3	1,019Kb / 15P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.9 2007-08-30
	SPP04N50C3	635Kb / 13P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.8 2009-11-26
	SPP16N50C3	729Kb / 14P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.2 2009-12-22
	SPB21N50C3	1Mb / 12P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.3 2005-11-07
	SPP07N65C3	2Mb / 15P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 1.91 2009-07-23
	SPP08N50C3	732Kb / 14P	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.91 2009-11-27
	SPP07N60C3	1Mb / 15P	New revolutionary high voltage technology Ultra low gate charge Rev. 3.1 2007-08-30
	SPB11N60S5	691Kb / 11P	New revolutionary high voltage technology Ultra low gate charge Rev. 2.3 2005-07-22

More results

SPI16N50C3 数据表(PDF) 1 Page - Infineon Technologies AG

SPI16N50C3 数据表(HTML) 1 Page - Infineon Technologies AG

类似零件编号 - SPI16N50C3

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类似零件编号 - SPI16N50C3

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