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STD11NM60ND 数据表(PDF) 6 Page - STMicroelectronics |
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STD11NM60ND 数据表(HTML) 6 Page - STMicroelectronics |
6 / 19 page Electrical characteristics STD/F/I/P/U11NM60ND 6/19 Doc ID 14625 Rev 2 Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) - 16 7 50 9 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 10 40 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 10 A, VGS=0 - 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) - 130 0.69 11 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 10 A Tj = 150 °C (see Figure 20) - 200 1.2 12 ns µC A |
类似零件编号 - STD11NM60ND |
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类似说明 - STD11NM60ND |
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