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BCW70LT1D 数据表(PDF) 3 Page - ON Semiconductor

部件名 BCW70LT1D
功能描述  General Purpose Transistor
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BCW70LT1D 数据表(HTML) 3 Page - ON Semiconductor

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BCW70LT1G
http://onsemi.com
3
TYPICAL NOISE CHARACTERISTICS
(VCE = −5.0 Vdc, TA = 25°C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS ≈ 0
IC = 10 mA
100
mA
30
mA
BANDWIDTH = 1.0 Hz
RS ≈∞
IC = 1.0 mA
300
mA
100
mA
30
mA
10
mA
10
20
50
100
200
500
1.0k 2.0k
5.0k
10k
2.0
1.0 mA
0.2
300
mA
NOISE FIGURE CONTOURS
(VCE = −5.0 Vdc, TA = 25°C)
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
Figure 3. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (mA)
10
0.5 dB
BANDWIDTH = 1.0 Hz
Figure 5. Wideband
IC, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
Noise Figure is Defined as:
NF + 20 log10
en2 ) 4KTRS ) In 2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input.
(Figure 4)
= Boltzman’s Constant (1.38 x 10−23 j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
en
I
n
K
T
R
S
1.0 dB
2.0 dB
3.0 dB
20
30
50 70 100
200 300
500 700 1.0k
10
20
30
50 70 100
200 300
500 700 1.0k
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
20
30
50
70
100
200 300
500 700 1.0k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB


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