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BC846BDW1T1G 数据表(PDF) 1 Page - ON Semiconductor

部件名 BC846BDW1T1G
功能描述  Dual General Purpose Transistors
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BC846BDW1T1G 数据表(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 7
1
Publication Order Number:
BC846BDW1T1/D
BC846BDW1T1G,
BC847BDW1T1G,
BC848CDW1T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848
Unit
Collector−Emitter Voltage
VCEO
65
45
30
V
Collector−Base Voltage
VCBO
80
50
30
V
Emitter−Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current −
Continuous
IC
100
100
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
380
250
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
328
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in
SOT−363
CASE 419B
STYLE 1
MARKING
DIAGRAM
1x MG
G
Q1
(1)
(2)
(3)
(4)
(5)
(6)
Q2
1
6
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = Pb−Free Package
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)


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