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BAT54 数据表(PDF) 1 Page - EIC discrete Semiconductors |
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BAT54 数据表(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BAT54/54A/54C/54S PRV : 30 Volts Io : 200 mA FEATURES : * These diodes feature very low turn-on voltage * Fast switching * These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * Pb / RoHS Free MECHANICAL DATA : * Case : SOT-23 plastic Case * BAT54 Marking Code : L4 * BAT54A Marking Code : L42 * BAT54C Marking Code : L43 * BAT54S Marking Code : L44 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Parameter Symbol Unit Maximum Repetitive Peak Reverse Voltage VRRM V Maximum Rectified Average Forward Current IF(AV) mA Maximum Repetitive Peak Forward Current IFRM mA Maximum Peak Forward Surge Current at tp < 1 s IFSM mA Total Power Dissipation Ptot mW Thermal Resistance Junction to Ambient Air RӨJA K/W Junction Temperature Range TJ °C Storage Temperature Range TSTG °C ELECTRICAL CHARACTERISTICS (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Test Condition Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage IR = 100 µA pulses V(BR) 30 - - V Leakage Current (Note 2) VR = 25 V IR -- 2 µA Forward Voltage (Note 2) IF = 0.1 mA VF - - 240 mV IF = 1 mA VF - - 320 mV IF = 10 mA VF - - 400 mV IF = 30 mA VF - - 500 mV IF = 100 mA VF - - 800 mV Diode Capacitance VR = 1 V, f = 1 MHz Ctot - - 10 pF Reverse Recovery Time IF = 10 mA through IR = 10 mA, to Irr = 1A , RL = 100 Ω Notes : (1) Device on fiberglass substrate (2) Pulse test tp < 300 µs, δ< 2% Page 1 of 2 Rev. 01 : April 17, 2006 300 (1) 200 (1) 600 (1) 230 430 (1) -65 to +150 SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL 125 Trr ns 5 -- Value 30 3 1 2 BAT54 3 1 2 BAT54S 3 1 2 BAT54C 3 1 2 BAT54A 3 1 2 1.02 0.89 2.04 1.78 3.10 2.70 Dimensions in millimeters 0.19 0.08 0.50 0.35 0.100 0.013 1.40 0.95 SOT-23 Certificate TH97/10561QM Certificate TW00/17276EM |
类似零件编号 - BAT54 |
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类似说明 - BAT54 |
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