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STX11NM60N 数据表(PDF) 5 Page - STMicroelectronics |
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STX11NM60N 数据表(HTML) 5 Page - STMicroelectronics |
5 / 20 page STx11NM60N Electrical characteristics 5/20 2.1 Electrical characteristics (curves) Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V Figure 18 Figure 23 22 18.5 50 12 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed) 10 40 A A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 10 A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10 A, di/dt =100 A/µs, VDD =100 V Figure 20 340 3.26 19.2 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD =100 V di/dt =100 A/µs, ISD = 10 A TJ = 150 °C Figure 20 460 4.42 19.2 ns µC A Figure 2. Safe operating area for TO-220, I²PAK, D²PAK Figure 3. Thermal impedance for TO-220, I²PAK, D²PAK |
类似零件编号 - STX11NM60N |
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类似说明 - STX11NM60N |
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