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STX11NM60N 数据表(PDF) 5 Page - STMicroelectronics

部件名 STX11NM60N
功能描述  N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STX11NM60N 数据表(HTML) 5 Page - STMicroelectronics

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STx11NM60N
Electrical characteristics
5/20
2.1
Electrical characteristics (curves)
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
Figure 18
Figure 23
22
18.5
50
12
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
10
40
A
A
VSD
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 10 A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10 A, di/dt =100 A/µs,
VDD =100 V
Figure 20
340
3.26
19.2
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD =100 V
di/dt =100 A/µs, ISD = 10 A
TJ = 150 °C Figure 20
460
4.42
19.2
ns
µC
A
Figure 2.
Safe operating area for TO-220,
I²PAK, D²PAK
Figure 3.
Thermal impedance for TO-220,
I²PAK, D²PAK


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