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STGD10NC60HDT4 数据表(PDF) 6 Page - STMicroelectronics |
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STGD10NC60HDT4 数据表(HTML) 6 Page - STMicroelectronics |
6 / 19 page Electrical characteristics STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD 6/19 Table 8. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 5 A IF = 5 A, TC = 125 °C 2 1.7 2.45 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 5 A, VR = 40 V, di/dt = 100 A/ μs (see Figure 21) 22 14 1.3 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 5 A,VR = 40 V, TC =125 °C, di/dt = 100 A/μs (see Figure 21) 33 30 1.85 ns nC A |
类似零件编号 - STGD10NC60HDT4 |
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类似说明 - STGD10NC60HDT4 |
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