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STF6NK70Z 数据表(PDF) 5 Page - STMicroelectronics

部件名 STF6NK70Z
功能描述  N-channel 700V - 1.5廓 - 5A - TO-220/TO-220FP Zener-protected SuperMESH??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF6NK70Z 数据表(HTML) 5 Page - STMicroelectronics

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STP6NK70Z - STF6NK70Z - STW6NK70Z
Electrical characteristics
5/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
700
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating,
VDS = Max rating, Tc=125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VGS = 0)
VGS = ± 20V
±
10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.5 A
1.5
1.8
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS =15V, ID = 2.5A
4.4
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
930
105
22
pF
pF
pF
Cosseq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 560V
70
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=350 V, ID= 2.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
17
18
45
30
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=560V, ID = 5A
VGS =10V
(see Figure 19)
34
6.5
17
47
nC
nC
nC


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