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2SK2952 数据表(PDF) 1 Page - Toshiba Semiconductor |
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2SK2952 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK2952 2009-09-29 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2952 Chopper Regulator Applications Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 400 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 400 V Drain−gate voltage (RGS = 20 kΩ) VDGR 400 V Gate−source voltage VGSS ±30 V DC (Note 1) ID 8.5 A Drain current Pulse (Note 1) IDP 34 A Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 427 mJ Avalanche current IAR 8.5 A Repetitive avalanche energy (Note 3) EAR 4.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 3.125 °C / W Thermal resistance, channel to ambient Rth (ch−a) 62.5 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 9.6 mH, RG = 25 Ω, IAR = 8.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) |
类似零件编号 - 2SK2952_09 |
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类似说明 - 2SK2952_09 |
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