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STB80NF10 数据表(PDF) 3 Page - STMicroelectronics |
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STB80NF10 数据表(HTML) 3 Page - STMicroelectronics |
3 / 14 page STB80NF10, STP80NF10 Electrical ratings Doc ID 6958 Rev 18 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage ±20 V ID (1) 1. Limited by package Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C dv/dt (3) 3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V(BR)DSS Peak diode recovery voltage slope 7 V/ns EAS (4) 4. Starting Tj = 25 °C, ID = 40 A, VDD = 50 V Single pulse avalanche energy 350 mJ Tstg Tj Storage temperature Operating junction temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
类似零件编号 - STB80NF10_09 |
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类似说明 - STB80NF10_09 |
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