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IRF7YSZ44VCM 数据表(PDF) 4 Page - International Rectifier

部件名 IRF7YSZ44VCM
功能描述  HEXFET짰 POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7YSZ44VCM 数据表(HTML) 4 Page - International Rectifier

  IRF7YSZ44VCM Datasheet HTML 1Page - International Rectifier IRF7YSZ44VCM Datasheet HTML 2Page - International Rectifier IRF7YSZ44VCM Datasheet HTML 3Page - International Rectifier IRF7YSZ44VCM Datasheet HTML 4Page - International Rectifier IRF7YSZ44VCM Datasheet HTML 5Page - International Rectifier IRF7YSZ44VCM Datasheet HTML 6Page - International Rectifier IRF7YSZ44VCM Datasheet HTML 7Page - International Rectifier  
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IRF7YSZ44VCM
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
1.0
10
100
VGS = 0V
TJ = 150°C
TJ = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs+ Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µs
0
5
10
15
20
25
30
35
40
QG Total Gate Charge (nC)
0
4
8
12
VDS= 48V
VDS= 30V
VDS= 12V
ID= 20A


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