SLA5013 datasheet(2/2 Pages) SANKEN

部件名	SLA5013

功能描述	N-channel P-channel H-bridge

Download	2 Pages

Scroll/Zoom	100%

制造商	SANKEN [Sanken electric]

网页	http://www.sanken-ele.co.jp/en

标志

2 / 2 page

51

N-ch

P-ch

N-ch

P-ch

N-ch

P-ch

Re(yfs)-ID Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-VDS Characteristics (Typical)

IDR-VSD Characteristics (Typical)

PT-Ta Characteristics

Characteristic curves

SLA5013

(Ta=25

°C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V(BR)DSS

100

V

ID=250

µA, VGS=0V

–100

V

ID=–250

µA, VGS=0V

IGSS

±500

nA

VGS=

±20V

500

nA

VGS= 20V

IDSS

250

µAVDS=100V, VGS=0V

–250

µAVDS=–100V, VGS=0V

VTH

2.0

4.0

V

VDS=10V, ID=250

µA

–2.0

–4.0

V

VDS=–10V, ID=–250

µA

Re(yfs)

2.4

3.7

S

VDS=10V, ID=5A

0.9

2.0

S

VDS=–10V, ID=–5A

RDS(ON)

0.27

0.30

Ω

VGS=10V, ID=5A

0.55

0.7

Ω

VGS=–10V, ID=–5A

Ciss

350

pF

VDS=25V, f=1.0MHz,

300

pF

VDS=–25V, f=1.0MHz,

Coss

130

pF

VGS=0V

200

pF

VGS=0V

ton

60

ns

ID=5A, VDD 50V, VGS=10V,

150

ns

ID=–5A, VDD

–50V, VGS=–10V,

toff

40

ns

see Fig. 3 on page 16.

200

ns

see Fig. 4 on page 16.

VSD

1.1

1.8

V

ISD=5A, VGS=0V

–4.5

–5.5

V

ISD=–5A, VGS=0V

trr

330

ns

ISD=

±100mA

220

ns

ISD= 100mA

0.3

0.05

0.5

1

5

7

ID (A)

510

0.5

0.1

(VDS=10V)

25

°C

125

°C

T

C=–40

°C

0

1020

3040

50

100

1000

VDS (V)

500

10

VGS=0V

f=1MHz

Ciss

Coss

Crss

0

1.0

1.5

VSD (V)

0.5

10

6

0

4

2

8

5V

10V

0.5

0.1

1

5

10

50

100

1

10

20

VDS (V)

0.5

5

(TC=25

°C)

ID (pulse) max

1ms

10

ms

(1shot)

R

DS

(ON)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

50

100

150

Ta (

°C)

With Silicone Grease

Natural Cooling

All Circuits Operating

Without Heatsink

0.3

–0.5

–1

1

5

ID (A)

–5

–10

0.5

–0.1

–0.05

(VDS=–10V)

25

°C

125

°C

TC

=–40

°C

0

–10

–20

–30

–40

–50

50

100

1000

VDS (V)

500

20

VGS=0V

f=1MHz

Ciss

Coss

Crss

0–3

VSD (V)

–1

–10

–6

0

–4

–2

–4

–8

–5V

–10V

–0.5

–0.1

–1

–5

–10

–50 –100

–1

–5

–20

VDS (V)

–0.5

–10

(TC=25

°C)

ID (pulse) max

1ms

10

ms

(1shot)

R

DS

(ON)

LIMITED

100

µ

s

Electrical characteristics

类似零件编号 - SLA5013

制造商	部件名	数据表	功能描述
Sanken electric	SLA5010	32Kb / 2P	N-channel P-channel 3-phase motor drive
	SLA5011	57Kb / 5P	5-Phase Stepper Motor Driver ICs
	SLA5011	21Kb / 1P	N-channel General purpose
	SLA5012	21Kb / 1P	P-channel General purpose
	SLA5015	21Kb / 1P	P-channel General purpose

More results

类似说明 - SLA5013

制造商	部件名	数据表	功能描述
Sanken electric	SLA5007	30Kb / 2P	N-channel P-channel H-bridge
	SLA5018	30Kb / 2P	N-channel P-channel H-bridge
	SLA5008	31Kb / 2P	N-channel P-channel H-bridge
	SMA5103	29Kb / 2P	N-channel P-channel H-bridge
Unisonic Technologies	2NNPP06	221Kb / 6P	60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
Unisonic Technologies	1NNPP10	221Kb / 6P	100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
alpha microelectronics ...	AMG-PI004	1Mb / 20P	H-Bridge/Full Bridge Array of P and N channel MOSFETs
Zetex Semiconductors	ZXMHN6A07T8	177Kb / 7P	60V N-CHANNEL MOSFET H-BRIDGE
Diodes Incorporated	ZXMHN6A07T8	186Kb / 7P	60V N-CHANNEL MOSFET H-BRIDGE
Diodes Incorporated	DMHT10H032LFJ	500Kb / 7P	100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE June 2020 Rev. 2 - 2