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SI-8090E 数据表(PDF) 3 Page - Sanken electric |
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SI-8090E 数据表(HTML) 3 Page - Sanken electric |
3 / 4 page 78 sBlock Diagram sStandard External Circuit sTa-PD Characteristics SWOUT VOS VIN 3 GND 5 N.C 4 2 1 OSC Reg. OCP Comp. Reset Drive TSD Amp. VREF VIN C1 D1 L1 5V : 200 µH 9V,12V: 300 µH 100 µF VIN VO AK06 GND NC GND GND SI-8000E SWOUT VOS 1 2 3 + C2 330 µF + 5 4 (Sanken) 15 10 5 0 –30 025 50 Ambient Operating Temperature Ta ( °C) 75 100 125 100 ×100 ×2mm (5.2 °C/W) 75× 75× 2mm (7.6 °C/W) Infinite heatsink Without heatsink With Silicon Grease Heatsink: Aluminum qSI-8000E Series sSelecting External Components 1. Inductor L1 1) It must be suited for switching regulators. Do not use inductors as noise filters as they generate excessive heat. 2) It must have the appropriate inductance value. If the inductance is too small (150 µH or lower), abnormal oscillation may occur causing operation problems in the overcurrent protection circuit within the rated current range. 3) The rated current must be satisfied. If the rated current is exceeded, magnetic saturation leads to overcurrent. 2. Capacitors C1 and C2 1) They must satisfy the withstand voltage and allowable ripple current. Exceeding the ratings of these capacitors or using them without derating shortens their service lives and may also cause abnormal oscillation of the IC. 2) C2 must be a low-impedance type capacitor. A low-impedance type capacitor is recommended for C2 to ensure minimum ripple voltage and stable switching operation. 3. Diode D1 The Sanken AK06 diode is recommended for D1. If you intended to use an equivalent diode, be sure to use a Schottky Barrier diode and make sure that the reverse voltage applied to terminal 2 of the IC does not exceed the value (–1V) given in the absolute maximum ratings. If you use a fast recovery diode or any other diode, application of a reverse voltage generated from the recovery or ON voltage of the diode may damage the IC. Application Variable output voltage Output voltage can be adjusted in the same way as SI-8000S in page 85. The efficiency depends on the input voltage and the out- put current. Thus, obtain the value from the efficiency graph on page 79 and substitute the percentage in the formula above. VO : Output voltage VIN : Input voltage IO : Output current ηx : Efficiency (%) VF : Diode forward voltage 0.4V(AK06) Thermal design for D1 must be considered separately. PD=VO•IO 100 –1 –VF•IO 1– VO ηχ VIN |
类似零件编号 - SI-8090E |
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类似说明 - SI-8090E |
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