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KM681000BLGI-10L 数据表(PDF) 6 Page - Samsung semiconductor

部件名 KM681000BLGI-10L
功能描述  128K x8 bit Low Power CMOS Static RAM
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KM681000BLGI-10L 数据表(HTML) 6 Page - Samsung semiconductor

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PRELIMINARY
Revision 0.3
KM681000B Family
CMOS SRAM
April 1996
DATA RETENTION CHARACTERISTICS
* 1) Commercial Product : TA=0 to 70¡É, unless otherwise specified
2) Extended Product : TA=-25 to 85¡É, unless otherwise specified
2) Industrial Product : TA=-40 to 85¡É, unless otherwise specified
** TA=25¡É
*** CS1¡ÃVCC-0.2V,CS2¡ÃVCC-0.2V(CS1 controlled) or CS2¡Â0.2V(CS2 controlled)
Item
Symbol
Test Condition*
Min
Typ**
Max
Unit
Vcc for data retention
VDR
CS1***¡ÃVcc-0.2V
2.0
-
5.5
V
Data retention current
IDR
KM681000BL
KM681000BL-L
Vcc=3.0V
CS1¡ÃVcc-0.2V
L-Ver
LL-Ver
-
-
1
0.5
50
10
§Ë
KM681000BLE
KM681000BLE-L
L-Ver
LL-Ver
-
-
-
-
50
25
KM681000BLI
KM681000BLI-L
L-Ver
LL-Ver
-
-
-
-
50
25
Data retention set-up time
tRDR
See data retention waveform
0
-
-
ms
Recovery time
tRDR
5
-
-
VCC
0.4V
VDR
CS2
GND
Data Retention Mode
CS2 ¡Â 0.2V
2) CS2 controlled
4.5V
DATA RETENTION TIMING DIAGRAM
VCC
4.5V
2.2V
VDR
CS1
GND
Data Retention Mode
CS1¡Ã VCC - 0.2V
1) CS1 Controlled
tSDR
tRDR
tSDR
tRDR


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