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KM62256C 数据表(PDF) 4 Page - Samsung semiconductor |
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KM62256C 数据表(HTML) 4 Page - Samsung semiconductor |
4 / 9 page Revision 4.0 KM62256C Family CMOS SRAM December 1997 4 RECOMMENDED DC OPERATING CONDITIONS 1) Note 1. Commercial Product : TA=0 to 70 °C, unless otherwise specified Extended Product : TA=-25 to 85 °C, unless otherwise specified Industrial Product : TA=-40 to 85 °C, unless otherwise specified 2. Overshoot : VCC+3.0V in case of pulse width≤30ns 3. Undershoot : -3.0V in case of pulse width ≤30ns 4. Overshoot and undershoot is sampled, not 100% tested Item Symbol Min Typ Max Unit Supply voltage Vcc 4.5 5.0 5.5 V Ground Vss 0 0 0 V Input high voltage VIH 2.2 - Vcc+0.5V2) V Input low voltage VIL -0.53) - 0.8 V CAPACITANCE 1) (f=1MHz, TA=25 °C) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 6 pF Input/Output capacitance CIO VIO=0V - 8 pF DC AND OPERATING CHARACTERISTICS 1. 20mA for Extended and Industrial Products 2. 10mA for Extended and Industrial Products 3. 2mA for Extended and Industrial Products Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS=VIH or WE=VIL, VIO=Vss to Vcc -1 - 1 µA Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIH or VIL - 7 151) mA Average operating current ICC1 Cycle time=1 µs, 100% duty, IIO=0mA CS ≤0.2V, VIN≤0.2V, VIN≥Vcc -0.2V - - 72) mA ICC2 Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL - - 70 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS=VIH, Other inputs=VIH or VIL - - 13) mA Standby Current (CMOS) KM62256CL KM62256CL-L ISB1 CS ≥Vcc-0.2V, Other inputs=0~Vcc L(Low Power) LL(L Low Power) - - 2 1 100 20 µA KM62256CLE KM62256CLE-L L(Low Power) LL(L Low Power) - - - - 100 50 µA KM62256CLI KM62256CLI-L L(Low Power) LL(L Low Power) - - - - 100 50 µA |
类似零件编号 - KM62256C |
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类似说明 - KM62256C |
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