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KM416C4100B 数据表(PDF) 6 Page - Samsung semiconductor |
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KM416C4100B 数据表(HTML) 6 Page - Samsung semiconductor |
6 / 35 page KM416C4000B, KM416C4100B CMOS DRAM AC CHARACTERISTICS (Continued) Parameter Symbol -45 -5 -6 Units Note Min Max Min Max Min Max Refresh period (4K, Normal) tREF 64 64 64 ms Refresh period (8K, Normal) tREF 64 64 64 ms Write command set-up time tWCS 0 0 0 ns 7 CAS to W delay time tCWD 32 36 38 ns 7,15 RAS to W delay time tRWD 67 73 83 ns 7 Column address to W delay time tAWD 43 48 53 ns 7 CAS precharge W delay time tCPWD 48 53 60 ns CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 5 ns 17 CAS hold time (CAS -before-RAS refresh) tCHR 10 10 10 ns 18 RAS to CAS precharge time tRPC 5 5 5 ns Access time from CAS precharge tCPA 26 30 35 ns 3 Fast Page mode cycle time tPC 31 35 40 ns Fast Page mode read-modify-write cycle time tPRWC 70 76 85 ns CAS precharge time (Fast Page cycle) tCP 9 10 10 ns 14 RAS pulse width (Fast Page cycle) tRASP 45 200K 50 200K 60 200K ns RAS hold time from CAS precharge tRHCP 28 30 35 ns OE access time tOEA 12 13 15 ns OE to data delay tOED 12 13 13 ns Output buffer turn off delay time from OE tOEZ 0 13 0 13 0 13 ns 6 OE command hold time tOEH 12 13 15 ns Write command set-up time (Test mode in) tWTS 10 10 10 ns 11 Write command hold time (Test mode in) tWTH 15 15 15 ns 11 W to RAS precharge time (C-B-R refresh) tWRP 10 10 10 ns W to RAS hold time (C-B-R refresh) tWRH 10 10 10 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 100 us 20,21,22 RAS precharge time (C-B-R self refresh) tRPS 80 90 110 ns 20,21,22 CAS hold time (C-B-R self refresh) tCHS -50 -50 -50 ns 20,21,22 |
类似零件编号 - KM416C4100B |
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类似说明 - KM416C4100B |
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