BC488B datasheet(4/6 Pages) ONSEMI

部件名	BC488B

功能描述	High Current Transistors PNP Silicon

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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BC488B

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4

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

−1.0 k

−1.0

−2.0

−5.0

Figure 6. Active Region, Safe Operating Area

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

−700

−500

−300

−200

−100

−70

−50

−30

−20

−10

−3.0

−10

−20

−50

−30

−7.0

−70 −100

BC490

100 ms

1.0 ms

1.0 s

TC = 25°C

TA = 25°C

IC, COLLECTOR CURRENT (mA)

Figure 7. “On” Voltages

1.0

0.8

0.6

0.4

0.2

0

0.5

1.0

200

20

TJ = 25°C

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

5.0

10

50

100

VBE(sat) @ IC/IB = 10

2.0

500

IC, COLLECTOR CURRENT (mA)

Figure 8. Collector Saturation Region

1.0

0.8

0.6

0.4

0.2

0

0.1

10

1.0

TJ = 25°C

IC = 10 mA

0.05

0.2

0.5

2.0

5.0

20

100 mA

250 mA

50

mA

50

500 mA

IC, COLLECTOR CURRENT (mA)

Figure 9. Base−Emitter Temperature Coefficient

−0.8

−2.8

1.0

100

10

RqVB for VBE

0.5

2.0

5.0

20

50

200

−1.2

−1.6

−2.0

−2.4

500

Figure 10. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

−0.5 −0.7

−1.0

−2.0

−3.0

−5.0

−7.0

−10

−20

−30

−50

−70

−100

−200

200

100

80

60

40

TJ = 125°C

25°C

−55°C

VCE = −1.0 V

−300

−500

类似零件编号 - BC488B

制造商	部件名	数据表	功能描述
Micro Electronics	BC488	139Kb / 1P	PNP SILICON PLANAR EPITAXIAL TRANSISTOR

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类似说明 - BC488B

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Zetex Semiconductors	FZT948	216Kb / 5P	PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
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