TPCS8004 datasheet(3/7 Pages) TOSHIBA

部件名	TPCS8004

功能描述	High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCS8004

2009-09-29

3

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cut-OFF current

IDSS

VDS = 200 V, VGS = 0 V

⎯

100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

200

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.5

⎯

3.5

V

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 0.6 A

⎯

0.56

0.8

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 0.6 A

0.9

1.8

⎯

S

Input capacitance

Ciss

⎯

380

⎯

pF

Reverse transfer capacitance

Crss

⎯

40

⎯

pF

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

140

⎯

pF

Rise time

tr

⎯

4.5

⎯

Turn-ON time

ton

⎯

12

⎯

Fall time

tf

⎯

23

⎯

Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 μs

⎯

54

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

12

⎯

nC

Gate-source charge

Qgs

⎯

8

⎯

nC

Gate-drain (“miller”) charge

Qgd

VDD ∼− 160 V, VGS = 10 V,

ID = 1.3 A

⎯

4

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current (pulse)

(Note 1)

IDRP

⎯

5.2

A

Forward voltage (diode)

VDSF

IDR = 1.3 A, VGS = 0 V

⎯

−2.0

V

Reverse recovery time

trr

⎯

89

⎯

ns

Reverse recovery charge

Qrr

IDR = 1.3 A, VGS = 0 V,

dIDR/dt = 100 A/μs

⎯

230

⎯

nC

VDD ∼− 100 V

0 V

VGS

10 V

ID = 0.6 A

VOUT

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链接网址

TPCS8004 数据表(PDF) 3 Page - Toshiba Semiconductor

TPCS8004 数据表(HTML) 3 Page - Toshiba Semiconductor

类似零件编号 - TPCS8004

类似说明 - TPCS8004

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1 2 3 4 5 6 7

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链接网址

数据表下载