数据搜索系统,热门电子元器件搜索 |
|
TPCF8B01 数据表(PDF) 5 Page - Toshiba Semiconductor |
|
TPCF8B01 数据表(HTML) 5 Page - Toshiba Semiconductor |
5 / 9 page TPCF8B01 2009-09-29 5 Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Ambient Temperature Ta (°C) PD – Ta Total gate charge Qg (nC) Dynamic input/output characteristics −1 0 −10 −100 0.4 0.8 1.2 1.6 2.0 Common source Ta = 25°C Pulse test VGS = 0 V −1 −1.8 −4.5 −2.5 10 −0.1 −1 −10 −100 100 1000 10000 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C −0.0 −80 −40 0 40 80 120 160 −0.5 −1.0 −1.5 −2.0 Common source VDS = −10 V ID = −200 μA Pulse test 0 0 40 80 120 160 0.4 0.8 1.2 1.6 2 (4) (1) (3) (2) Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) t= 5S t = 5 s 0 0 −2 −4 −6 −8 −10 −4 −8 −12 −16 −20 0 −2 −4 −6 −8 −10 VDS −4 V −8 V VDD = −16 V VGS Common source ID = −2.7 A Ta = 25°C Pulse test 0 −80 −40 0 40 80 120 160 50 100 150 200 250 300 Common source Pulse test VGS = −1.8 V −2.5 V −4.5 V ID = −0.7, −1.4, −2.7 A −0.7 A ID = −2.7 A ID = −1.4 A −0.7 A ID = −1.4 A |
类似零件编号 - TPCF8B01 |
|
类似说明 - TPCF8B01 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |