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TPCA8004-H 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8004-H 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCA8004-H 2006-11-16 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 20 A ⎯ 4.8 6.2 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 20 A ⎯ 3.5 4.6 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 20 A 40 80 ⎯ S Input capacitance Ciss ⎯ 2265 ⎯ Reverse transfer capacitance Crss ⎯ 255 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 1045 ⎯ pF Rise time tr ⎯ 5 ⎯ Turn-on time ton ⎯ 14 ⎯ Fall time tf ⎯ 11 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 µs ⎯ 50 ⎯ ns VDD ∼− 24 V, VGS = 10 V, ID = 40 A ⎯ 37 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 24 V, VGS = 5 V, ID = 40 A ⎯ 20 ⎯ Gate-source charge 1 Qgs1 ⎯ 8.2 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 8.7 ⎯ Gate switch charge QSW VDD ∼− 24 V, VGS = 10 V, ID = 40 A ⎯ 12.7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 120 A Forward voltage (diode) VDSF IDR = 40 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ∼− 15 V 0 V VGS 10 V ID = 20A VOUT |
类似零件编号 - TPCA8004-H |
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类似说明 - TPCA8004-H |
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