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2SK2963 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 2SK2963
功能描述  DC-DC Converter, Relay Drive and Motor Drive Applications
Download  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SK2963 数据表(HTML) 2 Page - Toshiba Semiconductor

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2SK2963
2008-03-06
2
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 0.5 A
0.65
0.95
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
0.5
0.7
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.5 A
0.6
1.2
S
Input capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
140
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
20
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
45
pF
Rise time
tr
8
Turn-on time
ton
13
Fall time
tf
45
Switching time
Turn-off time
toff
175
ns
Total gate charge
(gate-source plus gate-drain)
Qg
VDD ≈ 80 V, VGS = 10 V, ID = 1 A
6.3
nC
Gate-source charge
Qgs
VDD ≈ 80 V, VGS = 10 V, ID = 1 A
4.3
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 1 A
2
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
1
A
Pulse drain reverse current
(Note 1)
IDRP
3
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
−1.5
V
Reverse recovery time
trr
IDR = 1 A, VGS = 0 V, dIDR/dt = 50 A/μs
80
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V, dIDR/dt = 50 A/μs
140
μC
0 V
10 V
VGS
VDD ≈ 50 V
ID = 0.5 A
VOUT
Duty
≤ 1%, tw = 10 μs
Z B
(The two digits represent the part number.)


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