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2SK2963 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SK2963 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2963 2008-03-06 2 Marking Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 100 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 ⎯ 2.0 V VGS = 4 V, ID = 0.5 A ⎯ 0.65 0.95 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.5 A ⎯ 0.5 0.7 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.5 A 0.6 1.2 ⎯ S Input capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 140 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 20 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 45 ⎯ pF Rise time tr ⎯ 8 ⎯ Turn-on time ton ⎯ 13 ⎯ Fall time tf ⎯ 45 ⎯ Switching time Turn-off time toff ⎯ 175 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 80 V, VGS = 10 V, ID = 1 A ⎯ 6.3 ⎯ nC Gate-source charge Qgs VDD ≈ 80 V, VGS = 10 V, ID = 1 A ⎯ 4.3 ⎯ nC Gate-drain (“miller”) charge Qgd VDD ≈ 80 V, VGS = 10 V, ID = 1 A ⎯ 2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 1 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 3 A Forward voltage (diode) VDSF IDR = 1 A, VGS = 0 V ⎯ ⎯ −1.5 V Reverse recovery time trr IDR = 1 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯ 80 ⎯ ns Reverse recovery charge Qrr IDR = 1 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯ 140 ⎯ μC 0 V 10 V VGS VDD ≈ 50 V ID = 0.5 A VOUT Duty ≤ 1%, tw = 10 μs Z B (The two digits represent the part number.) |
类似零件编号 - 2SK2963_08 |
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类似说明 - 2SK2963_08 |
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