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TEA1520T 数据表(PDF) 11 Page - NXP Semiconductors

部件名 TEA1520T
功能描述  SMPS ICs for low-power systems
Download  17 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

TEA1520T 数据表(HTML) 11 Page - NXP Semiconductors

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TEA152X_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 23 March 2009
11 of 17
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
Valley switching
(
∆V/∆t)vrec
valley recognition voltage
change with time
−102 -
+102 V/
µs
fvalley
ringing frequency for valley
switching
N
× V
o = 100 V
200
550
800
kHz
td(vrec-swon)
valley recognition to
switch-on delay time
-
150
-
ns
Current and short-circuit winding protection
Vsource(max)
maximum source voltage
∆V/∆t = 0.1 V/µs
0.47
0.50
0.53
V
td(prop)
delay from detecting
Vsource(max) to switch-off
∆V/∆t = 0.5 V/µs
-
160
185
ns
Vswp
short circuit winding
protection voltage
∆V/∆t = 0.5 V/µs
0.7
0.75
0.8
V
tleb
leading edge blanking time
250
350
450
ns
FET output stage
IL(drain)
drain leakage current
Vdrain = 650 V
-
-
125
µA
VBR(DRAIN)
breakdown voltage on pin
DRAIN
Tj >0 °C
650
-
-
V
RDSon
drain-source on-state
resistance
TEA1520x
Isource = −0.06 A
Tj =25 °C
-
48
55.2
Tj = 100 °C
-
68
78.2
TEA1521x
Isource = −0.125 A
Tj =25 °C
-
24
27.6
Tj = 100 °C
-
34
39.1
TEA1522x
Isource = −0.25 A
Tj =25 °C
-
12
13.8
Tj = 100 °C
-
17
19.6
TEA1523P
Isource = −0.50 A
Tj =25 °C
-
6.5
7.5
Tj = 100 °C
-
9.0
10.0
tf(DRAIN)
fall time on pin DRAIN
Vi = 300 V;
no external capacitor
at drain
-75
-
ns
Temperature protection
Tprot(max)
maximum threshold
temperature
150
160
170
°C
Tprot(hys)
hysteresis of protection
temperature
-2
-
°C
Table 6.
Characteristics …continued
Tamb =25 °C; no over temperature; all voltages are measured with respect to ground; currents are
positive when flowing into the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit


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