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Si8230BB-B-IS 数据表(PDF) 6 Page - Silicon Laboratories

部件名 Si8230BB-B-IS
功能描述  0.5 AND 4.0 AMP ISODRIVERS (2.5 AND 5 KVRMS)
Download  52 Pages
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制造商  SILABS [Silicon Laboratories]
网页  http://www.silabs.com
标志 SILABS - Silicon Laboratories

Si8230BB-B-IS 数据表(HTML) 6 Page - Silicon Laboratories

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Si823x
6
Rev. 0.3
2. Electrical Specifications
Table 1. Electrical Characteristics1
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Specifications
Input-side Power Supply
Voltage
VDDI
4.5
5.5
V
Driver Supply Voltage
VDDA, VDDB
Voltage between VDDA and
GNDA, and VDDB and GNDB
(See “9. Ordering Guide” )
6.5
24
V
Input Supply Quiescent
Current
IDDI(Q)
Si8230/32/33/35/36
2
3
mA
Si8231/34
2
3
mA
Output Supply Quiescent
Current
IDDA(Q),
IDDB(Q)
Current per channel
3.0
mA
Input Supply Active Current
IDDI
PWM freq = 500 kHz
2.5
mA
Output Supply Active Current
IDDO
PWM freq = 500 kHz
3.6
mA
Input Pin Leakage Current
IVIA, IVIB,
IPWM
–10
+10
µA dc
Input Pin Leakage Current
IDISABLE
–10
+10
µA dc
Logic High Input Threshold
VIH
2.0
V
Logic Low Input Threshold
VIL
0.8
V
Input Hysteresis
VIHYST
400
450
mV
Logic High Output Voltage
VOAH,
VOBH
IOA, IOB = –1 mA
(VDDA
/VDDB)
— 0.04
——
V
Logic Low Output Voltage
VOAL, VOBL
IOA, IOB = 1 mA
0.04
V
Output Short-circuit Pulsed
Sink Current
IOA(SCL),
IOB(SCL)
Si8230/1/2, Figure 4
0.5
A
Si8233/4/5/6, Figure 4
4.0
Output Short-circuit Pulsed
Source Current
IOA(SCH),
IOB(SCH)
Si8230/1/2, Figure 5
0.25
Si8233/4/5/6, Figure 5
2.0
Output Sink Resistance
RON(SINK)
Si8230/1/2
5.0
Si8233/4/5/6
1.0
Output Source Resistance
RON(SOURCE)
Si8230/1/2
15
Si8233/4/5/6
2.7
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k
.


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